SD103A [BL Galaxy Electrical]

SMALL SIGNAL SCHOTTKY DIODES; 小信号肖特基二极管
SD103A
型号: SD103A
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

SMALL SIGNAL SCHOTTKY DIODES
小信号肖特基二极管

小信号肖特基二极管
文件: 总2页 (文件大小:93K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GALAXY ELECTRICAL  
SD103A---SD103C  
BL  
VOLTAGE RANGE: 40 -- 20 V  
CURRENT: 400 mW  
SMALL SIGNAL SCHOTTKY DIODES  
FEATURES  
For general purpose applications  
DO - 35(GLASS)  
Metal silicon schottkybarrier device which is protected  
bya PN junction guard ring. The low forward voltage  
drop and fast switching make it ideal for protection of  
MOS devices,steering,biasing and coupling diodes for  
fast switching and low logic level applications  
MECHANICAL DATA  
Case:JEDEC DO--35,glass case  
Polarity: Color band denotes cathode end  
Weight: Approx. 0.13 gram  
ABSOLUTE RATINGS(LIMITING VALUES)  
Symbols  
UNITS  
SD103A  
40  
SD103B  
SD103C  
20  
V
mW  
A
Peak reverse voltage  
VRRM  
Ptot  
30  
4001)  
15  
Pow er dissipation (Infinite Heat Sink)  
Single cycle surge 60Hz sine wave  
Forward continuous current  
IFSM  
I
(AV)  
350  
125  
m A  
Junction tenperature  
TJ  
Storage temperature range  
-55 ---+ 150  
T
STG  
1)Valid provided that leads at a distance of 4mmfromcase are kept at ambient temperature  
ELECTRICAL CHARACTERISTICS  
(Ratings at 25 ambient temperature unless otherw ise specified)  
Symbols  
VR  
Typ.  
Max.  
Min.  
UNITS  
40  
30  
20  
SD103A  
SD103B  
SD103C  
Reverse breakdow n voltage  
@ IR=10 A  
-
-
V
Leakage current  
@ VR=50V  
SD103A,VR=30V  
SD103B,VR=20V  
SD103C,VR=10V  
-
-
-
5
IR  
μA  
Forw ard voltage drop @ IF=20mA  
IF=200mA  
0.37  
-
V
VF  
0.6  
-
Junction capacitance @ VR=0V,f=1MHz  
50  
pF  
ns  
CJ  
trr  
-
-
-
Reverse recovery time @ IF=IR=50mA to 200mA,recover to 0.1 IR  
10  
-
K/W  
Thermal resistance junction to ambient air  
RθJA  
250  
-
www.galaxycn.com  
1.  
Document Number 0265011  
BLGALAXY ELECTRICAL  
RATINGS AND CHARACTERISTIC CURVES  
SD103A---SD103C  
FIG.1 -- TYPICAL VARIATION OF FWD. CURRENT VS FWD.  
FIG.2 -- TYPICAL FORWARD CONDUCTION CURVE OF  
XXXXXXXX-VOLTAGE FOR PRIMARY CONDUCTION THROUGH THE XXXXX COMBINATION SCHOTTKY BARRIER AND PN  
XXXXXXXX-SCHOTTKY BARRIER  
XXXXX JUNCTION GUARD RING  
5
4
3
2
1
0
1000  
100  
10  
1
0.1  
0.01  
0.001  
0.0  
0.5  
1.0  
1.5  
2.0  
0
100 200 300 400 500 600 700 800 900 1000  
– Forward Voltage ( mV )  
V
– Forward Voltage ( V )  
F
V
F
FIG.3 -- TYPICAL VARIATION OF REVERSE CURRENT AT  
FIG.4 -- TYPICAL CAPACITANCE CURVE AS A  
JUNCTION OF REVERSE VOLTAGE  
XXXXXXXXX  
VARIATION TEMPERATURES  
30  
10000  
1000  
100  
10  
f=1MHz  
25  
20  
15  
10  
5
0
1
0
5
10  
– Reverse Voltage ( V )  
R
15  
20  
25  
30  
0
20 40 60 80 100 120 140 160  
V
°
T – Junction Temperature ( C )  
j
www.galaxycn.com  
2.  
Document Number 0265011  
BLGALAXY ELECTRICAL  

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